Earlier this month, Schaeffler announced the mass production of a new high-voltage inverter brick incorporating ROHM’s SiC MOSFET bare chips, alongside ROHM’s release of an ultra-compact CMOS ...

High voltage silicon carbide (SiC) power devices represent a transformative advance in power electronics, offering superior voltage handling capability, high temperature performance and enhanced ...

SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits (ICs) for energy-efficient power conversion, today announced the addition of two ...

UltraVolt, Inc., announced expansion of its popular line of precision high-voltage amplifiers - the HVA Series - capable of operating in DC, reversible, and amplifier modes. The new line of precision ...

Researchers at North Carolina State University have created a high voltage and high frequency silicon carbide (SiC) power switch that could cost much less than similarly rated SiC power switches. The ...

Power electronics will evolve in the coming years, especially for components, because WBG semiconductor technologies are becoming increasingly popular. High operating temperatures, voltage, and ...

Extends creepage distance to a minimum of 5.1mm, approximately 1.3 times greater than standard products · GlobeNewswire Inc. Comparison of SiC SBD Package Shape Designs Increasing the creepage ...

Increasing the creepage distance supresses creepage discharge, eliminates the need for insulation treatment via potting Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM ...