This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

The basic construction of Bipolar Junction Transistor (BJT) comprises of two P-N junctions producing three connecting terminals with each terminal being given a name to identify it from the other two.

There is some hogwash out there, masquerading as engineering white papers, which are really just click bait to get your contact details. And there are some gems available for the same price. And, in ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

Over the recent weeks here at Hackaday, we’ve been taking a look at the humble transistor. In a series whose impetus came from a friend musing upon his students arriving with highly developed ...

Indium selenide (InSe), a next-generation 2D semiconductor nanomaterial, has seen attention for its superior electron mobility compared to silicon semiconductors and a saturation speed more than twice ...

How many remote controls do you have in your home? Don’t you wish all these things were better integrated somehow, or that you could add remote control functionality to a random device? It’s a common ...

Transistors are three-terminal semiconductor devices. One terminal controls electrical resistance or current flow between the other two terminals, giving transistors a valvelike operation. Transistors ...

MJE1123, once from Motorola and now from New Jersey Semi-conductor Products, is a rather specialised transistor. It is a 40V 4A power pnp with high gain and good saturation (200mV max at 1A). The ...