Interfacing a new oxide with silicon is a major challenge ... the electrons are transferred from the filled dangling bonds of the surface silicon atoms to the oxygen atoms that attach to the ...

Whereas, as shown in Figure 2, in a structure with no dangling bond, an electron has a very small chance of jumping from a silicon substrate to a metal gate. The corresponding electron potential band ...

The passivating contact was made with a silicon-oxide tunnel layer followed by ... interface damage and simultaneously reduces the dangling bond density at the crystalline silicon surface.” ...

Instead, silicon atoms at the surface have dangling bonds that can attach to a single oxygen atom. “We take oxygen atoms and we dope them on a single layer,” said Scott Bibaud, CEO of Atomera. “But it ...

1] And as Seung Hyun Oh of KAIST said in work presented at this year’s VLSI Technology Symposium [⁠ 2], they provide better mobility than amorphous silicon ... oxide (ITO) cap layer on top of the IGZO ...

At <3mn, thickness variations in silicon cause enough scattering to significantly degrade carrier mobility, plus dangling bonds on the channel surface get enough access to degrade performance. 2D ...