NOR flash memory is evolving much in the same way as its cousin, NAND flash: 3D NOR is on the horizon and poised to boost ...

What just happened? Researchers at Fudan University in Shanghai have unveiled a flash memory device that breaks speed records once thought unreachable. Dubbed "PoX," the device can program data in ...

Abstract: In real-life operation, electronic devices are exposed at the same time to different sources of ionizing radiation. In this paper, we evaluate the impact of ...

Researchers from Fudan University in China have created the world’s fastest flash memory, which performs about 25 billion operations per second. The device, called «PoX», takes 400 picoseconds ...

Supports single-level and multi-level cells (SLC and MLC) NAND Flash devices. Compatible with ONFI 2.1 Flash Interface for synchronous and asynchronous access. Supports source synchronous double data ...

Open NAND Flash Interface (ONFI) for NAND Flash Memory chips is an open standard. Arasan’s ONFI 4.2 PHY IP is designed to connect seamlessly with their ONFI 4.2 Host Controller IP. Arasan’s ...

A new technical paper titled “An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures” was published by researchers at Forschungszentrum Jülich, RWTH Aachen ...